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| savantic semiconductor product specification silicon npn power transistors 2SC4510 d escription with to-3pml package high voltage ,high speed switching low collector saturation voltage applications switching regulators dc-dc convertors solid state relay general purpose power amplifiers pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current 15 a i b base current 5 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 1.56 /w fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4510 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 500 v v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0 400 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 10 v v cesat collector-emitter saturation voltage i c =6a; i b =1.2a 0.8 v v besat base-emitter saturation voltage i c =6a; i b =1.2a 1.2 v i cbo collector cut-off current v cb =450v; i e =0 100 a i ebo emitter cut-off current v eb =10v; i c =0 100 a h fe dc current gain i c =2a ; v ce =5v 25 65 switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time i c =7.5a;r l =20 b i b1 =0.75a; i b2 =-1.5a pw = 20s; duty c 2% 0.5 s savantic semiconductor product specification 3 silicon npn power transistors 2SC4510 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SC4510 |
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